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Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Standard in brief
Scope of Application：
1.1 本标准规定了Ⅲ-Ⅴ族化合物半导体单晶抛光片亚表面损伤的测试方法。
1.2 本标准适用于GaAs、InP（GaP、GaSb可参照进行）等化合物半导体单晶抛光片亚表面损伤的测量。
Basic information
Standard No：GB/T 26070-2010
Standard Name：化合物半导体抛光晶片亚表面损伤的反射差分谱测试方法
English Name：Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
Standard Status：现行
Release Date：2011-01-10
Effective Date：2011-10-01
Language of Publication：中文简体
Standard Classification
ICS Number：77.040.99
CCS Number：H17
Publication Information
Number of pages：16
Number of words：21 K
Format：大16
Edition：1
Color Pages：0
Electronic Version：Yes
Color Images：No
Print Publication Date：2011-06-01
Standard Revision Information
Has Amendment：No
Other Information
Application Dept：中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
Standard Type：CN
Standard Attribute：GB
Other Standard Number：26070
Drafter：陈涌海、赵有文、提刘旺、王元立
Drafting Organization：中国科学院半导体研究所
Management Organization：全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
