Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
全国半导体设备和材料标准化技术委员会材料分技术委员会
本标准规定了硅外延层载流子浓度汞探针电容-电压测量方法。
本标准测试的硅外延层的厚度必须大于测试偏压下耗尽层的深度。
本标准也可适用于硅抛光片的载流子浓度测量。
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