Test method for measuring resistivity of monocrystal silicon
MOD SEMI MF 84-1105;SEMI MF 397-1106
全国半导体设备和材料标准化技术委员会材料分技术委员会
本方法规定了用直排四探针法测量硅单晶电阻率的方法。本方法适用于测量试样厚度和从试样边缘与任一探针端点的最近距离二者均大于探针间距的４倍的硅单晶体电阻率以及测量直径大于探针间距10倍、厚度小于探针间距４倍的硅单晶圆片的电阻率。本方法可测定的硅单晶电阻率范围为1×10 -3 Ω·cm～3×10 3 Ω·cm。
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