Chinese Standard: GB/T 26066-2010

Practice for shallow etch pit detection on silicon

全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)

本标准规定了用热氧化和化学择优腐蚀技术检验抛光片或外延片表面因沾污造成的浅腐蚀坑的检测方法。
本标准适用于检测〈111〉或〈100〉晶向的p型或n型抛光片或外延片，电阻率大于0.001 Ω·cm。

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