Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
1.1 本标准规定了Ⅲ-Ⅴ族化合物半导体单晶抛光片亚表面损伤的测试方法。
1.2 本标准适用于GaAs、InP（GaP、GaSb可参照进行）等化合物半导体单晶抛光片亚表面损伤的测量。
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