Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、材料分技术委员会(SAC/TC 203/SC 2)
本标准规定了碳化硅单晶片厚度及总厚度变化（TTV）的测试方法，包括接触式和非接触式两种方式。
本标准适用于直径不小于30 mm、厚度为0.13 mm～1 mm的碳化硅单晶片。
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