Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分会(SAC/TC 203/SC 2)
本标准规定了4H晶型和6H晶型碳化硅单晶抛光片的微管密度的无损检测方法。
本标准适用于4H晶型和6H晶型碳化硅单晶抛光片经单面抛光或双面抛光后、微管的径向尺寸在一微米至几十微米范围内的微管密度的测量。
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