Test method for dislocation density of GaN single crystal—Cathodoluminescence spectroscopy
全国半导体设备和材料标准化技术委员会（SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分会(SAC/TC 203/SC 2)
本标准规定了用阴极荧光显微镜法测试氮化镓单晶位错密度的方法。
本标准适用于位错密度在1×103个/cm2～5×108个/cm2之间的氮化镓单晶中位错密度的测试。
This standard is the original Chinese electronic standard.
After you successfully purchase, we will send the electronic version of this standard to your email address.
If you need translation, please contact email: ChineseStandardsLibraryS001@gmail.com.
