Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon
IDT ISO 12406:2010
全国微束标准化技术委员会(SAC/TC 38)
本标准详细规定了用扇形磁场或四极杆式二次离子质谱仪对硅中砷进行深度剖析的方法，以及用触针式轮廓仪或光学干涉仪深度定标的方法。本标准适用于砷原子浓度范围从1×1016 atoms/cm3～2.5×1021 atoms/cm3的单晶硅、多晶硅、非晶硅样品，坑深在50 nm及以上。
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