Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
本标准规定了采用惰性气体熔融及红外技术测试硅材料中氧含量的方法。
本标准适用于不同导电类型、不同电阻率范围的硅单晶、多晶硅中氧含量的测试，测试范围为2.5×1015 cm-3（0.05 ppma)～2.5×1018 cm-3（50 ppma)。
注： 硅材料中的氧含量以每立方厘米中的原子数计。
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