Chinese Standard: GB/T 4058-2009

Test method for detection of oxidation induced defects in polished silicon wafers

全国半导体设备和材料标准化技术委员会材料分技术委员会

本标准规定了硅抛光片氧化诱生缺陷的检验方法。
本标准适用于硅抛光片表面区在模拟器件氧化工艺中诱生或增强的晶体缺陷的检测。
硅单晶氧化诱生缺陷的检验也可参照此方法。

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