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Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Standard in brief
Scope of Application:
本文件描述了测量经化学机械抛光或外延生长的硅片上表面元素污染的原子表面密度的TXRF方法。
本文件适用于以下情形:
——原子序数从16(S)到92(U)的元素;
——原子表面密度介于1×1010 atoms/cm2~1×1014 atoms/cm2之间的污染元素;
——采用VPD(气相分解)样品制备方法得到的原子表面密度介于5×108 atoms/cm2~5×1012 atoms/cm2之间的污染元素(见3.4)。
Basic information
Standard No:GB/T 40110-2021
Standard Name:表面化学分析 全反射X射线荧光光谱法(TXRF)测定硅片表面元素污染
English Name:Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Standard Status:现行
Release Date:2021-05-21
Effective Date:2021-12-01
Language of Publication:中文简体
Standard Classification
ICS Number:71.040.40
CCS Number:G04
Related Standards
Referenced Standards:ISO 14644-1
Adopted Standards:ISO 14706:2014
Adopted Standard Name:《表面化学分析 全反射X射线荧光光谱法(TXRF)测定硅片表面元素污染》
Adoption Level:IDT
Publication Information
Number of pages:28
Number of words:44 K
Format:大16
Edition:1
Color Pages:0
Electronic Version:Yes
Color Images:No
Print Publication Date:2021-05-01
Standard Revision Information
Has Amendment:No
Other Information
Application Dept:国家市场监督管理总局、国家标准化管理委员会
Standard Type:CN
Standard Attribute:GB
Other Standard Number:40110
Drafter:王海、张艾蕊、王梅玲、任丹华、徐昕荣、范燕
Drafting Organization:中国计量科学研究院、华南理工大学
Management Organization:全国微束分析标准化技术委员会(SAC/TC 38)
Proposing Department:全国微束分析标准化技术委员会(SAC/TC 38)